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| SemiWell Semiconductor SBN13003A High Voltage Fast-Switching NPN Power Transistor Features - Very High Switching Speed (Typical 120ns@1.0A) - Minimum Lot-to-Lot hFE Variation - Low VCE(sat) (Typical 230mV@1.0A/0.25A) - Wide Reverse Bias S.O.A Symbol 2.Collector 3.Base 1.Emitter General Description This device is designed for high voltage, high speed switching characteristic required such as lighting system, switching regulator, inverter and deflection circuit. TO-92 1 Absolute Maximum Ratings Symbol VCES VCEO VEBO IC ICM IB IBM PC TSTG TJ 23 Parameter Collector-Emitter Voltage ( VBE = 0 ) Collector-Emitter Voltage ( IB = 0 ) Emitter-Base Voltage ( IC = 0 ) Collector Current Collector Peak Current ( tP 5 ms ) Base Current Base Peak Current ( tP 5 ms ) Total Dissipation at TC = 25 C Storage Temperature Max. Operating Junction Temperature Value 700 400 9.0 1.5 3.0 0.75 1.5 1.1 - 65 ~ 150 150 Units V V V A A A A W C C Thermal Characteristics Symbol RJA Parameter Thermal Resistance, Junction-to-Ambient Value 113.6 Units C/W Mar, 2003. Rev. 3 Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved 1/6 SBN13003A Electrical Characteristics Symbol ICEV VCEO(sus) ( TC = 25 C unless otherwise noted ) Parameter Collector Cut-off Current ( VBE = - 1.5V ) Collector-Emitter Sustaining Voltage ( IB = 0 ) Condition VCE = 700V VCE = 700V IC = 10 mA IC = 0.5A IC = 1.0A IC = 1.5A IC = 0.5A IC = 1.0A IC = 0.5A IC = 1.0A IC = 1.0A IB1 = 0.2A TP = 25 VCC = 15V IB1 = 0.2A L = 0.35mH VCC = 15V IB1 = 0.2A L = 0.35mH IC = 1.0A IB2 = -0.5A Vclamp = 300V IC = 1.0A IB2 = -0.5A Vclamp = 300V TC = 100 C IB = 0.1A IB = 0.25A IB = 0.5A IB = 0.1A IB = 0.25A VCE = 2V VCE = 2V VCC = 125V IB2 = - 0.2A TC = 100 C Min - Typ - Max 1.0 5.0 - Units mA 400 - V VCE(sat) Collector-Emitter Saturation Voltage - - 0.3 0.5 1.0 1.0 1.2 30 25 V VBE(sat) Base-Emitter Saturation Voltage - - V hFE DC Current Gain Resistive Load Turn-On Time Storage Time Fall Time Inductive Load Storage Time Fall Time Inductive Load Storage Time Fall Time 10 5 - ton ts tf ts tf - 0.25 1.32 0.23 1.0 3.0 0.4 - 1.2 0.12 4.0 0.3 ts tf - 1.8 0.16 5.0 0.4 Notes : Pulse Test : Pulse width 300, Duty cycle 2% 2/6 SBN13003A Fig 1. Static Characteristics 2.7 2.4 2.1 IB = 500mA IB = 400mA 30 40 Fig 2. DC Current Gain IC, Collector Current [A] hFE, DC Current Gain 1.8 1.5 1.2 0.9 0.6 0.3 0.0 IB = 300mA IB = 250mA IB = 200mA IB = 150mA IB = 100mA IB = 50mA TJ = 125 C 20 o TJ = 25 C 10 o Notes : VCE = 5V VCE = 1V 0 1 2 3 4 5 0 0.01 0.1 1 VCE, Collector-Emitter Voltage [V] IC, Collector Current [A] Fig 3. Collector-Emitter Saturation Voltage 10 1.2 1.1 1 Fig 4. Base-Emitter Saturation Voltage VCE, Collector-Emitter Voltage [V] VBE, Base-Emitter Voltage [V] 1.0 TJ = 125 C 0.1 o TJ = 25 C 0.9 0.8 0.7 0.6 0.5 0.1 o TJ = 25 C 0.01 o TJ = 125 C o Note : hFE = 5 0.1 1 Note : hFE = 5 1 IC, Collector Current [A] IC, Collector Current [A] Fig 5. Resistive Load Fall Time 1000 10 Fig 6. Resistive Load Storage Time Notes : VCC = 125V hFE = 5 IB1 = - IB2 tstg, Time [us] tf, Time [ns] TJ = 25 C o TJ = 25 C o 100 Notes : VCC = 125V hFE = 5 IB1 = - IB2 1 0.0 0.3 0.6 0.9 1.2 1.5 1.8 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IC, Collector Current [A] IC, Collector Current [A] 3/6 SBN13003A Fig 7. Safe Operation Areas 10 1 Fig 9. Power Derating Curve 125 IC, Collector Current [A] 10 0 Power Derating Factor (%) 100 75 10 -1 DC 50 10 -2 25 Single Pulse 10 -3 0 0 10 10 1 10 2 10 3 0 50 100 150 o 200 VCE, Collector-Emitter Clamp Voltage [V] TC, Case Temperature ( C) 4/6 SBN13003A Inductive Load Switching & RBSOA Test Circuit LC IB1 IC IB VCE D.U.T RBB VBE(off) VClamp VCC Resistive Load Switching Test Circuit RC IB1 IC IB VCE D.U.T RBB VBE(off) VCC 5/6 SBN13003A TO-92 Package Dimension Dim. A B C D E F G H I J mm Min. Typ. 4.2 3.7 4.43 14.07 4.83 14.87 0.4 4.43 4.83 0.45 2.54 2.54 0.33 0.48 0.013 0.174 0.174 0.554 Max. Min. Inch Typ. 0.165 0.146 0.190 0.585 0.016 0.190 0.017 0.100 0.100 0.019 Max. A E B F C G 1 D 2 3 1. Emitter 2. Collector 3. Base H I J 6/6 |
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